The effect of growth temperature on physical properties of heavily doped ZnO:AI films

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 4, 2009, Pages 697-703

  Hong, Jongin ^a   Paik, Hanjong ^b   Hwang, Hosung ^c   Lee, Sunghwan ^b   DeMello, Andrew J ^a   No, Kwangsoo ^b  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION EDGES; AL CONTENT; AL-DOPED ZNO; BLUE SHIFT; COLUMNAR STRUCTURES; CRYSTALLOGRAPHIC QUALITY; DOPED ZNO; GLASS SUBSTRATES; GRAIN FORMATION; HEAVILY DOPED; HIGH TEMPERATURE; LARGE-GRAIN; OPTICAL TRANSPARENCY; RADIO FREQUENCY MAGNETRON SPUTTERING; SHORT WAVELENGTHS; ZNO FILMS;

ALUMINUM; GRAIN GROWTH; GROWTH TEMPERATURE; METALLIC FILMS; MICROSTRUCTURE; PHYSICAL PROPERTIES; SEMICONDUCTING ZINC COMPOUNDS; ZINC OXIDE;

THERMAL EFFECTS;

EID: 65649106890     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200824291     Document Type: Article

References (31)

1. K. L. Chopra, S. Major, and D. K. Pandya, Thin Solid Films 102(1), 1 (1983).
2. S. A. Bashar and A. A. Rezazadeh, IEEE Trans. Microw. Theory Tech. 43(9), 2299 (1995).
3. B. G. Lewis and D. C. Pain, MRS Bull. 25,22 (2000).
4. E. Fortunato, P. Barquinha, A. Pimentel, A. Goncalves, A. Marques, L. Pereira, and R. Martins, Thin Solid Films 487, 205 (2005).
5. E. Fortunato, D. Ginley, H. Hosono, and D. C. Paine, MRS Bull. 32, 242 (2007).
6. R. Waser (ed.), Nanoelectronics and Information Technology: Advanced Electronic Materials and Novel Devices (Wiley-VCH, 2003), pp. 917-972.
7. A. L. Dawar and J. C. Joshi, J. Mater. Sci. 19,1 (1984).
8. H. L. Hartnagel, A. L. Dawar, A. K. Jain, and C. Jagadish, Semiconducting Transparent Thin Films (Institute of Physics, Bristol, 1995).
9. T. Minami, Thin Solid Films 516, 5822 (2008).
10. P. P. Sahay and R. K. Nath, Sens. Actuators B 133, 222 (2008).
11. Jianhua and R. G. Gordon, J. Appl. Phys. 71(2), 880 (1992).
12. T. Minami, H. Nanto, and S. Takta, Jpn. J. Appl. Phys. 23, L280(1984).
13. B. H. Choi, H. B. Im, J. S. Song, and K. H. Yoon, Thin Solid Films 193/194, 712 (1991).
14. S. N. Qiu and I. Shih, Sol. Energy Mater. 15,261 (1987).
15. B. D. Ahm, S. H. Oh, C. H. Lee, G. H. Kim, H. J. Kim, and S. Y. Lee, J. Cryst. Growth 309,128 (2007).
16. K. Ellmer, J. Phys. D, Appl. Phys. 34, 3097 (2001).
17. T. Minami, Semicond. Sci. Technol. 20, S35 (2005).
18. E. Fortunato, D. Ginley, H. Hosono, and D. C. Paine, MRS Bull. 32, 242 (2007).
19. Handbook of Auger Electron Spectroscopy, Physical Electronics, 3rd ed. (Eden Psairie, 1976).
20. C. R. Ottermann et al., Thin Solid Films 286, 32 (1996).
21. Philips Application Note: Reflectivity Measurements of Oxide Layers on Glass Surface (Netherlands).
22. V. Holy, U. Piestch, and T. Baumbach, High Resolution X-ray Scattering from Thin Films to Lateral Nanostructures (Springer-Verlag, New York, 2004).
23. T. Minami, T. Miyata, Y. Ohtani, and T. Kuboi, Phys. Status Solidi RRL 1, R31 (2007).
24. J.-P. Lin and J.-M. Wu, Appl. Phys. Lett. 92, 134103 (2008).
25. J. I. Pankove, Optical Processes in Semiconductors (Dover, New York, 1971).
26. E. Burstein, Phys. Rev. 93, 632 (1954).
27. T. S. Moss, Proc. Phys. Soc. B 67, 775 (1954).
28. N. F. Mott, Philos. Mag. 6, 287 (1961).
29. P. A. Wolff, Phys. Rev. 126, 405 (1962).
30. D. Auvergne, J. Camassel, and H. Mathieu, Phys. Rev. B 11,2251(1975).
31. J. G. Lu, S. Fujita, T. Kawaharamura, H. Nishinaka, Y. Kamada, T. Ohshima, Z. Z. Ye, Y. J. Zeng, Y. Z. Zhang, L. P. Zhu, H. P. He, and B. H. Zhao, J. Appl. Phys. 101, 083705 (2007).