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Journal of Materials Science: Materials in Electronics

Volumn 21, Issue 10, 2010, Pages 1030-1035

Effects of Al content on the properties of ZnO:Al films prepared by Al 2O 3 and ZnO co-sputtering

(7) Deng, Zhonghua a,b Huang, Changgang a Huang, Jiquan a Wang, Meili a,b He, Hong a Wang, Hai a Cao, Yongge a

a FUJIAN INSTITUTE OF RESEARCH ON THE STRUCTURE OF MATTER (China)

b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES (China)

Author keywords

[No Author keywords available]

Indexed keywords

AL CONTENT; ALUMINUM-DOPED ZINC OXIDE; AZO FILMS; BAND GAP ENERGY; CERAMIC TARGET; COSPUTTERING; ELECTRICAL CONDUCTIVITY; ELECTRON DONORS; FILM SURFACES; OPTICAL ABSORPTION SPECTRUM; OPTICAL AND ELECTRICAL PROPERTIES; PREFERRED ORIENTATIONS; QUARTZ SUBSTRATE; RADIO-FREQUENCY MAGNETRON CO-SPUTTERING; WAVELENGTH RANGES; WURTZITE STRUCTURE; XRD; ZNO; ZNO:AL FILMS;

ALUMINUM COATINGS; CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; LIGHT ABSORPTION; MAGNETRONS; OXIDE FILMS; QUARTZ; SURFACE ROUGHNESS; ZINC OXIDE; ZINC SULFIDE;

ALUMINUM;

EID: 77957890444 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-010-0084-0 Document Type: Article

Times cited : (19)

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