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Journal of Materials Science: Materials in Electronics

Volumn 21, Issue 11, 2010, Pages 1221-1227

Effects of hydrogen annealing on the structural, optical and electrical properties of indium-doped zinc oxide films

(9) Huang, Changgang a,b Wang, Meili b Deng, Zhonghua b Cao, Yongge b Liu, Quanlin a Huang, Zhi b Liu, Yuan b Guo, Wang b Huang, Qiufeng b

a UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING (China)

b FUJIAN INSTITUTE OF RESEARCH ON THE STRUCTURE OF MATTER (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALED FILMS; ANNEALING TEMPERATURES; CRYSTALLINITIES; DEPOSITED FILMS; HIGH TRANSPARENCY; HYDROGEN ANNEALING; OPTICAL AND ELECTRICAL PROPERTIES; RADIO-FREQUENCY-MAGNETRON SPUTTERING; VISIBLE AND NEAR INFRARED;

ANNEALING; ELECTRIC PROPERTIES; HYDROGEN; INDIUM; SURFACE ROUGHNESS; ZINC; ZINC OXIDE;

OXIDE FILMS;

EID: 78049527902 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-009-0050-x Document Type: Article

Times cited : (24)

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