Oxygen sensing properties at high temperatures of Β -Ga2 O3 thin films deposited by the chemical solution deposition method

Journal of Applied Physics

Volumn 102, Issue 2, 2007, Pages

  Bartic, Marilena ^a   Ogita, Masami ^a   Isai, Masaaki ^a   Baban, Cristian Loan ^b   Suzuki, Hisao ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

^b ALEXANDRU IOAN CUZA UNIVERSITY OF IASI   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; HIGH TEMPERATURE OPERATIONS; SEMICONDUCTING GALLIUM; SURFACE MORPHOLOGY;

ANNEALING PARAMETERS; CHEMICAL SOLUTION DEPOSITION; OXYGEN SENSING PROPERTIES;

THIN FILMS;

EID: 34547590993     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2756085     Document Type: Article

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