Combining HRTEM-EELS nano-analysis with capacitance-voltage measurements to evaluate high-κ thin films deposited on Si and Ge as candidate for future gate dielectrics

Microelectronic Engineering

Volumn 88, Issue 4, 2011, Pages 419-422

  Schamm Chardon, S ^a   Coulon, P E ^a   Lamagna, L ^b   Wiemer, C ^b   Baldovino, S ^b,c   Fanciulli, M ^b,c  

^a UNIVERSITÉ DE TOULOUSE   (France)

^b LABORATORIO MDM   (Italy)

^c UNIVERSITY OF MILANO BICOCCA   (Italy)

Author keywords

Aberration corrected high resolution transmission electron microscopy (HRTEM); Capacitance voltage measurements; Dielectric constant; Electron energy loss spectroscopy (EELS); Erdoped HfO2; High k dielectric stacks on Si and Ge; La doped ZrO2; Nanoanalytical electron microscopy; Permittivity

Indexed keywords

CAPACITANCE-VOLTAGE MEASUREMENTS; DIELECTRIC CONSTANT; DOPED ZRO2; ELECTRON ENERGY LOSS SPECTROSCOPY (EELS); ER-DOPED; HIGH-K DIELECTRIC STACKS ON SI AND GE; NANOANALYTICAL ELECTRON MICROSCOPY;

ATOMIC LAYER DEPOSITION; CAPACITANCE; CRYSTAL ATOMIC STRUCTURE; DIELECTRIC MATERIALS; DISSOCIATION; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON MICROSCOPY; ELECTRON SCATTERING; ELECTRONS; ENERGY DISSIPATION; ERBIUM; GATE DIELECTRICS; GATES (TRANSISTOR); GERMANIUM; HAFNIUM OXIDES; NUCLEAR INSTRUMENTATION; PERMITTIVITY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SILICON; THIN FILMS; VAPOR DEPOSITION; VOLTAGE MEASUREMENT;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 79751538664     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2010.10.012     Document Type: Conference Paper

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