Reduced anisotropy of a-plane GaN layers grown by metalorganic vapor phase epitaxy

Journal of Crystal Growth

Volumn 315, Issue 1, 2011, Pages 178-182

  Song, Keun Man ^a,c   Kim, Jong Min ^a   Lee, Dong Hun ^a   Kang, Dae Hun ^a   Park, Won Kyu ^a   Shin, Chan Soo ^a   Ko, Chul Gi ^a   Hwang, Sung Min ^b   Yoon, Dae Ho ^c  

^a Korea Advanced Nano Fab Center (KANC)   (South Korea)

^b Korea Electronic Technology Institute (KETI)   (South Korea)

^c Sungkyunkwan University   (South Korea)

Author keywords

A1. X ray diffraction; A3. Metalorganic chemical vapor deposition; B1. Nitrides

Indexed keywords

3-D GROWTH; A-PLANE GAN; A3. METALORGANIC CHEMICAL VAPOR DEPOSITION; B1. NITRIDES; CRYSTALLINE ANISOTROPY; CRYSTALLINE QUALITY; GROWTH PRESSURE; GROWTH-MODE TRANSITION; IN-SITU MONITORING; INCREASE IN PRESSURE; ISLAND GROWTH; LATERAL GROWTH; METAL-ORGANIC VAPOR PHASE EPITAXY; NON-POLAR; NUCLEATION LAYERS; PLANE SAPPHIRE; RECOVERY TIME; REFLECTANCE SPECTRUM; SECOND GROWTH; SMOOTH SURFACE;

ANISOTROPY; ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CRYSTALLINE MATERIALS; DIFFRACTION; EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; NUCLEATION; PRESSURE EFFECTS; THREE DIMENSIONAL; VAPORS; X RAY DIFFRACTION; X RAYS;

GALLIUM ALLOYS;

EID: 79551689548     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.09.018     Document Type: Article

References (21)

1. I. Akasaki, S. Sota, H.H. Sakai, T. Tanaka, M. Koike, and H. Amano Electron. Lett. 32 1996 1105
2. T. Mukai, M. Yamada, and S. Nakamura Jpn. J. Appl. Phys. 38 1999 3976
3. P. Waltereit, O. Brandt, A. Trampert, H.T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K.H. Ploog Nature 406 2000 865
4. T.S. Ko, T.C. Wang, R.C. Gao, H.G. Chen, G.S. Huang, T.C. Lu, H.C. Kuo, and S.C. Wang J. Cryst. Growth 305 2007 360
5. M.D. Craven, S.H. Lim, F. Wu, J.S. Speck, and S.P. DenBaars Phys. Status Solidi A 194 2002 541
6. X. Ni, Y. Fu, Y.T. Moon, N. Biyikli, and H. Morkoc J. Cryst. Growth 290 2006 166
7. M. Araki, N. Mochimizo, K. Hoshino, and K. Tadatomo Jpn. J. Appl. Phys. 46 2007 555
8. T.S. Ko, T.C. Wang, R.C. Gao, H.G. Chen, G.S. Huang, T.C. Lu, H.C. Kuo, and S.C. Wang J. Cryst. Growth 300 2007 308
9. T. Paskova, V. Darakchieva, P.P. Paskov, J. Birch, E. Valcheva, P.O.A. Persson, B. Arnaudov, S. Tungasmitta, and B. Monemar J. Cryst. Growth 281 2005 55
10. M.D. Craven, F. Wu, A. Chakraborty, M. Imer, U.K. Mishra, S.P. DenBaars, and J.S. Speck Appl. Phys. Lett. 84 2004 1281
11. T. Ghne, Z. Bougrioua, S. Lagt, M. Nemoz, P. Venngus, B. Vinter, and M. Leroux Phys. Rev. B 77 2008 075308
12. J.L. Hollander, M.J. Kappers, C. McAleese, and C.J. Humphreys Appl. Phys. Lett. 93 2008 101104
13. R. Miyagawa, M. Narukawa, B. Ma, H. Miyake, and K. Hiramatsu J. Cryst. Growth 310 2008 4979
14. H.S. Peak, S.N. Lee, J.K. Son, T. Sakong, O.H. Nam, Y. Park, Properties of lateral epitaxially overgrown a-plane GaN on r-sapphire, Presented at IWN 2006 (International Workshop on Nitrides Semiconductors 2006) (not published), October 2227, Kyoto, Japan, 2006.
15. H.M. Wang, C.Q. Chen, Z. Gong, J.P. Zhang, M. Gaevski, M. Su, J.W. Yang, and M.A. Khan Appl. Phys. Lett. 84 2004 499
16. B. Heying, X.H. Wu, A.S. Keller, Y. Li, D. Kapolnek, B.P. Keller, S.P. DenBaars, and J.S. Speck Appl. Phys. Lett. 68 1996 643
17. J. Han, T.-B. Ng, R.M. Biefeld, M.H. Crawford, and D.M. Follstaedt Appl. Phys. Lett. 71 1997 3114
18. K.M. Song, D.J. Kim, Y.T. Moon, and S.J. Park J. Cryst. Growth 233 2001 439
19. C. Roder, S. Einfeldt, S. Figge, T. Paskova, D. Hommel, P.P. Paskov, B. Monemar, and U. Behn J. Appl. Phys. 100 2006 103511
20. D. Li, H. Chen, H.B. Yu, and Y.J. Han J. Cryst. Growth 263 2004 76
21. B. Ma, W. Hu, H. Miyake, and K. Hiramatsu Appl. Phys. Lett. 95 2009 121910