Characteristics of GaN grown by metalorganic chemical vapor deposition using trimethylgallium and triethylgallium

Journal of Crystal Growth

Volumn 233, Issue 3, 2001, Pages 439-445

  Song, Keun Man ^a   Kim, Dong Joon ^a   Moon, Yong Tae ^a   Park, Seong Ju ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

A1. nucleation; A3. metalorganic chemical vapor deposition; B1. nitrides; B2. semiconducting III V materials

Indexed keywords

CARRIER CONCENTRATION; DEFECTS; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE ROUGHNESS; THICKNESS MEASUREMENT;

GROWTH RATE;

THIN FILMS;

EID: 0035546561     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01605-0     Document Type: Article

References (18)