SCOPUS 정보 검색 플랫폼

Volumn 516, Issue 20, 2008, Pages 6888-6891

Polymorphous silicon thin films deposited at high rate: Transport properties and density of states

(7) Soro, Y M a Abramov, A b,c Gueunier Farret, M E a Johnson, E V b Longeaud, C a Roca i Cabarrocas, P b Kleider, J P a

a UNIV PARIS SUD (France)

b LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES (France)

c IOFFE INSTITUTE (Russian Federation)

Author keywords

Defects; High deposition rate; Polymorphous silicon; Transport properties

Indexed keywords

CHEMICAL PROPERTIES; NONMETALS; PLASMA DEPOSITION; SCALE (DEPOSITS); SILICON; SILICON COMPOUNDS; SPUTTER DEPOSITION; STANDARDS; THICK FILMS; THIN FILMS; TRANSPORT PROPERTIES; VAPOR DEPOSITION;

(PL) PROPERTIES; CHEMICAL VAPOUR DEPOSITION; COMPLEMENTARY TECHNIQUES; DENSITY OF STATES (DOF); DIFFUSION LENGTHS; ELSEVIER (CO); HIGH DEPOSITION RATES; HIGH RATES; LIGHT-SOAKING; MOBILITY GAPS; POLYMORPHOUS SILICON; RF PLASMAS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 45949106836 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2007.12.123 Document Type: Article

Times cited : (7)

References (9)

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