Amorphous silicon films with high deposition rate prepared using argon and hydrogen diluted silane for stable solar cells

Solar Energy Materials and Solar Cells

Volumn 91, Issue 13, 2007, Pages 1253-1257

  Gogoi, Purabi ^a   Dixit, P N ^b   Agarwal, Pratima ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY GUWAHATI   (India)

^b NATIONAL PHYSICAL LABORATORY   (India)

Author keywords

Amorphous silicon; Argon dilution; Deposition rate; Stability; Staebler Wronski effect

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; ARGON; DEPOSITION RATES; DILUTION; ETCHING; HYDROGEN; RAMAN SCATTERING; SCANNING ELECTRON MICROSCOPY; STABILITY; X RAY DIFFRACTION;

ATOMIC HYDROGEN; DIFFUSION LENGTH MEASUREMENT; STAEBLER WRONSKI EFFECT;

SOLAR CELLS;

EID: 34249785926     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2007.03.004     Document Type: Article

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