Parameters for photoelectronic characterisation and the Fermi level in amorphous silicon

Thin Solid Films

Volumn 427, Issue 1-2, 2003, Pages 355-357

  Bruggemann R ^a  

^a UNIVERSITY OF OLDENBURG   (Germany)

Author keywords

Amorphous silicon; Diffusion length; Electronic properties; Photoconductivity

Indexed keywords

DIFFUSION; ELECTRON MOBILITY; FERMI LEVEL; HOLE MOBILITY; HYDROGENATION; NANOSTRUCTURED MATERIALS; PHOTOCONDUCTIVITY; SEMICONDUCTOR DOPING;

MICROCRYSTALLINE SILICON;

AMORPHOUS SILICON;

EID: 0037416721     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)01227-0     Document Type: Conference Paper

References (11)

1. Anderson D.A., Spear W.E. Philos. Mag. 36:1977;695.
2. Vanier P.E. Solar Cells. 9:1983;85.
3. Beyer W., Hoheisel B. Solid State Comm. 47:1983;573.
4. Kocka J., Nebel C.E., Abel C.-D. Philos. Mag. B. 63:1991;221.
5. Brüggemann R., Abel C.-D., Bauer G.H. Guimaraes L., Palz W., Reyff C., Kiess H., Helm P. Proceedings 11th European Photovoltaic and Solar Energy Conference 1992. 1993;Harwood Academic Publishers, Chur, CH. p. 676.
6. Wyrsch N., Beck N., Pipoz P., Goerlitzer M., Beck H., Shah A. Solid State Phenom. 44-46:1995;525.
7. Shah A., Sauvain E., Hubin J., Pipoz C., Hof C. Philos. Mag. B75:1997;925.
8. Beck N., Wyrsch N., Hof C., Shah A. J. Appl. Phys. 79:1996;9361.
9. Pipoz P., Sauvain E., Hubin J., Shah A. MRS Symp. Proc. 258:1992;777.
10. Overhof H., Thomas P. Electronic transport in hydrogenated amorphous semiconductors. Höhl G., Niekisch E.A. Springer Tracts in Modern Physics 114. 1989;Springer Verlag, Heidelberg.
11. Zedlitz R., Heintze M., Bauer G.H. J. Non-Cryst. Solids. 137/138:1991;195.