Interfacial cleaning effects in passivating InSb with Al2O 3 by atomic layer deposition

Electrochemical and Solid-State Letters

Volumn 11, Issue 6, 2008, Pages

  Hou, C H ^a   Chen, M C ^a   Chang, C H ^a,c   Wu, T B ^a   Chiang, C D ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; PASSIVATION; THIN FILMS;

INSULATING PROPERTY; METAL PRECURSOR;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 42349084605     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2906129     Document Type: Article

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