Quantification of discrete oxide and sulfur layers on sulfur-passivated InAs by XPS

Surface and Interface Analysis

Volumn 37, Issue 11, 2005, Pages 989-997

  Petrovykh, D Y ^a,b   Sullivan, J M ^b,c   Whitman, L J ^b  

^a University of Maryland   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c NORTHWESTERN UNIVERSITY   (United States)

Author keywords

Attenuation; Coverage; InAs; Indium arsenide; Oxidation; Oxide; Passivation; Thioacetamide; XPS

Indexed keywords

ATTENUATION; MONOLAYERS; PASSIVATION; SEMICONDUCTING INDIUM COMPOUNDS; SULFUR; X RAY PHOTOELECTRON SPECTROSCOPY;

COVERAGE; INDIUM ARSENIDE; THIOACETAMIDE;

OXIDES;

EID: 28744442925     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.2095     Document Type: Conference Paper

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