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Journal of Vacuum Science and Technology B

Volumn 29, Issue 1, 2011, Pages 0110101-0110105

Accuracy of thickness measurement for Ge epilayers grown on SiGe/Ge/Si(100) heterostructure by x-ray diffraction and reflectivity

(5) Liu, Xue Chao a Myronov, M a Dobbie, A a Nguyen, Van H a Leadley, D R a

a UNIVERSITY OF WARWICK (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPILAYERS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; REFLECTION; SEMICONDUCTOR QUANTUM WELLS; SILICON; THICKNESS GAGES; THICKNESS MEASUREMENT; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

HIGH RESOLUTION X RAY DIFFRACTION; REDUCED PRESSURE CHEMICAL VAPOR DEPOSITION; RELIABLE RESULTS; ROCKING CURVES; SURFACE-ROUGHENING; VIRTUAL SUBSTRATES; X RAY REFLECTIVITY; X-RAY DIFFRACTION AND REFLECTIVITY;

GERMANIUM METALLOGRAPHY;

EID: 79551617960 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3530594 Document Type: Conference Paper

Times cited : (2)

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