X-ray metrology for high-k atomic layer deposited HfxZr1-xO2 films

Microelectronic Engineering

Volumn 85, Issue 1, 2008, Pages 49-53

  Gallegos III, Jesus J ^a   Triyoso, Dina H ^b   Raymond, Mark ^b  

^a Jordan Valley Semiconductors UK Ltd   (United Kingdom)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

ALD; Hafnium; High k; Metrology; X ray; XRR; Zirconium

Indexed keywords

ATOMIC LAYER DEPOSITION; CARRIER MOBILITY; CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; SILICA; SPECTROSCOPIC ELLIPSOMETRY; ZIRCONIUM;

X RAY METROLOGY;

OXIDE FILMS;

EID: 36148983408     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.02.013     Document Type: Article

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