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Volumn 90, Issue 19, 2007, Pages

Enhancement of room-temperature hole conductivity in narrow and strained Ge quantum well by double-side modulation doping

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); GERMANIUM; HETEROJUNCTIONS; HOLE MOBILITY; PHONON SCATTERING; SILICON COMPOUNDS;

DEVICE OPERATING TEMPERATURES; DOUBLE SIDE MODULATION DOPING; LOW TEMPERATURE MOBILITY; ROOM TEMPERATURE MOBILITY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 34248334637 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2737396 Document Type: Article

Times cited : (8)

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