Effects of N2+ ion implantation on phase transition in Ge 2 Sb2 Te5 films

Journal of Applied Physics

Volumn 100, Issue 8, 2006, Pages

  Kim, Youngkuk ^a   Baeck, J H ^a   Cho, M H ^b   Jeong, E J ^a   Ko, D H ^a  

^a Yonsei University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; GERMANIUM COMPOUNDS; GRAIN GROWTH; ION IMPLANTATION; PHASE TRANSITIONS; TELLURIUM COMPOUNDS; X RAY DIFFRACTION;

CRYSTALLINE GRAIN GROWTH; GE2 SB2 TE5 (GST) FILMS; INTERSTITIAL N2 MOLECULES;

THIN FILMS;

EID: 33750499964     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2357640     Document Type: Article

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