|
Volumn 104, Issue 10, 2008, Pages
|
Characteristics of amorphous Ag0.1 (Ge2 Sb2 Te5) 0.9 thin film and its ultrafast crystallization
|
Author keywords
[No Author keywords available]
|
Indexed keywords
COMPUTER PROGRAMMING;
CRYSTALLINE MATERIALS;
CRYSTALLIZATION;
ELECTRIC RESISTANCE;
LASER BEAMS;
LASERS;
NANOCRYSTALLINE ALLOYS;
PULSE GENERATORS;
PULSED LASER APPLICATIONS;
SEMICONDUCTING GERMANIUM COMPOUNDS;
SHEET RESISTANCE;
SOLDERED JOINTS;
THICK FILMS;
AMORPHOUS CHALCOGENIDES;
AMORPHOUS STATES;
ANNEALED FILMS;
CRYSTALLINE PHASE TRANSFORMATIONS;
CRYSTALLINE PHASIS;
CRYSTALLINE STATES;
CRYSTALLIZATION SPEEDS;
CURRENT PULSES;
DATA STORAGES;
ELECTRON HOPPING;
FILM SURFACES;
FOCUSED LASER BEAMS;
LOCAL HEATING;
MATERIAL CHARACTERISTICS;
NANO-SECONDS;
OPTICAL ABSORPTIONS;
POWERS (P);
PROGRAMMING CURRENTS;
PULSE DURATIONS;
RESPONSE SIGNALS;
SHORT LASERS;
TIME SCALES;
ULTRA FASTS;
SILVER;
|
EID: 57049171377
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.3026720 Document Type: Article |
Times cited : (67)
|
References (25)
|