Silicon nanocrystal formation upon annealing of SiO2 layers implanted with Si ions

Semiconductors

Volumn 36, Issue 6, 2002, Pages 647-651

  Kachurin, G A ^a   Yanovskaya, S G ^a   Volodin, V A ^a   Kesler, V G ^a   Leier, A F ^a   Ruault, M O ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b CENTRE DE CALCUL DE L INSTITUT NATIONAL DE PHYSIQUE NUCLEAIRE ET DE PHYSIQUE DES PARTICULES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0036624116     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1485663     Document Type: Article

References (26)

1. T. Shimizu-Iwayama, K. Fujita, S. Nakao, et al., J. Appl. Phys. 75 (12), 7779 (1994).
2. U. Herrmann, H.H. Dunken, E. Wendler, and W. Wesch, J. Non-Cryst. Solids 204, 237 (1996).
3. E. Wendler, U. Herrmann, W. Wesch, and H.H. Dunken, Nucl. Instrum. Methods Phys. Res. B 116, 332 (1996).
4. G.A. Kachurin, I.E. Tyschenko, K.S. Zhuravlev, et al., Nucl. Instrum. Methods Phys. Res. B 112, 571 (1997).
5. P. Mutti, G. Ghislotti, S. Bertoni, et al., Appl. Phys. Lett. 66, 851 (1995).
6. G.A. Kachurin, A.F. Leier, K.S. Zhuravlev, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 32, 1371 (1998) [Semiconductors 32, 1222 (1998)].
7. S.P. Withrow, C.W. White, A. Meldrum, et al., J. Appl. Phys. 86, 396 (1999).
8. S. Hayashi, T. Nagareda, Y. Kanazawa, and K. Yamamoto, Jpn. J. Appl. Phys. 32, 3840 (1993).
9. T. Ehara and S. Machida, Thin Solid Films 346, 275 (1999).
10. K. Jackson, M.R. Pederson, D. Porezag, et al., Phys. Rev. B 55, 2549 (1997).
11. Y. Guyot, B. Champagnon, M. Boudeulle, et al., Thin Solid Films 297, 188 (1997).
12. V.G. Baru, M.I. Elinson, V.A. Zhitov, et al., Mikroélektronika 27, 456 (1998).
13. S. Veprek, F.-A. Sarrot, and Z. Iqbal, Phys. Rev. B 36, 3344 (1987).
14. Ch. Ossadnik, S. Veprek, and I. Gregora, Thin Solid Films 337, 148 (1999).
15. R.Z. Valiev and I.V. Aleksandrov, Nanostructural Materials Produced by Severe Plastic Deformation (Logos, Moscow, 2000).
16. H.H. Andersen and E. Johnson, Nucl. Instrum. Methods Phys. Res. B 106, 480 (1995).
17. Yu.I. Petrov, Clusters and Small Particles (Nauka, Moscow, 1986).
18. S. Hayashi and H. Kanamori, Phys. Rev. B 26, 7079 (1982).
19. A.F. Leier, L.N. Safronov, and G.A. Kachurin, Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 389 (1999) [Semiconductors 33, 380 (1999)].
20. L.A. Nesbit, Appl. Phys. Lett. 46, 38 (1985).
21. G.A. Kachurin, S.G. Yanovskaya, M.-O. Ruault, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 1004 (2000) [Semiconductors 34, 965 (2000)].
22. T.R. Guilinger, M.J. Kelly, D.R. Tallant, et al., Mater. Res. Soc. Symp. Proc. 283, 115 (1993).
23. J. Zi, H. Buscher, C. Falter, et al., Appl. Phys. Lett. 69, 200 (1996).
24. P. Mishra and K.P. Jain, Phys. Rev. B 62, 14790 (2000).
25. T. Okada, T. Iwaki, K. Yamamoto, et al., Solid State Commun. 49, 809 (1984).
26. T. Inokuma, Y. Wakayama, T. Muramoto, et al., J. Appl. Phys. 83, 2228 (1998).