Calculations of the electronic structure of silicon quantum dots: Oxidation-induced redshifts in the energy gap

Semiconductor Science and Technology

Volumn 21, Issue 4, 2006, Pages 443-449

  Nishida, Masahiko ^a  

^a KANAZAWA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; ELECTRONIC STRUCTURE; ENERGY GAP; HYDROGEN; LUMINESCENCE; OXIDATION; SILICON;

HIGHEST OCCUPIED MOLECULAR ORBITAL (HOMO); HOMO-LUMO ENERGY GAPS; LOWEST UNOCCUPIED MOLECULAR ORBITAL (LUMO); LUMINESCENCE REDSHIFTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33644981193     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/4/006     Document Type: Article

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