Cu diffusion-induced vacancy-like defects in freestanding GaN

New Journal of Physics

Volumn 13, Issue , 2011, Pages

  Elsayed, M ^a   Krause Rehberg, R ^a   Moutanabbir, O ^b   Anwand, W ^c   Richter, S ^d   Hagendorf, C ^e  

^a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^c INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^d FRAUNHOFER INSTITUTE FOR MECHANICS OF MATERIALS IWM   (Germany)

^e FRAUNHOFER CENTER FOR SILICON PHOTOVOLTAICS CSP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CAPPING LAYER; CU ATOMS; CU DIFFUSION; DEFECTS INDUCED; DIFFUSED LAYERS; DIVACANCIES; DOPPLER BROADENING MEASUREMENTS; FREESTANDING GAN; ISOCHRONAL ANNEALING; LARGE CLUSTERS; OUT-DIFFUSION; POSITRON LIFETIME MEASUREMENTS; QUALITATIVE CHARACTERIZATION; TEMPERATURE RANGE; THERMAL BEHAVIORS; THERMALLY ACTIVATED DIFFUSION; THICK LAYERS; ULTRA-THIN; VACANCY CLUSTER; VACANCY-LIKE DEFECTS;

ANNEALING; DIFFUSION; GALLIUM NITRIDE; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS; SECONDARY ION MASS SPECTROMETRY; SURFACE DEFECTS; VACANCIES;

GALLIUM ALLOYS;

EID: 79251564760     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/13/1/013029     Document Type: Article

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