Controlled synthesis of copper-silicide nanostructures

Crystal Growth and Design

Volumn 10, Issue 7, 2010, Pages 2983-2989

  Li, Shaozhou ^a   Cai, Hui ^a   Gan, Chee Lip ^a   Guo, Jun ^a   Dong, Zhili ^a   Ma, Jan ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYTIC EFFECTS; CONTROLLED SYNTHESIS; FILLING PROCESS; GROWTH MECHANISMS; SI NANOSTRUCTURES;

GROWTH (MATERIALS); NANOSTRUCTURES; SILICIDES; SILICON OXIDES; STRESS RELIEF;

SILICON;

EID: 79251476218     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg1000232     Document Type: Article

References (52)

1. Schlesinger, M. E. Chem. Rev. 1990, 90, 607-628.
2. Chen, L. J. JOM 2005, 57, 24-30.
3. Reader, A. H.; Vanommen, A. H.; Weijs, P. J. W.; Wolters, R. A. M.; Oostra, D. J. Rep. Prog. Phys. 1993, 56, 1397-1467.
4. Zhang, S. L.; Ostling, M. Crit. Rev. Solid State Mater. Sci. 2003, 28, 1-129.
5. Zhou, F.; Szczech, J.; Pettes, M. T.; Moore, A. L.; Jin, S.; Shi, L. Nano Lett. 2007, 7, 1649-1654.
6. Makita, Y.; Ootsuka, T.; Fukuzawa, Y.; Otogawa, N.; Abe, H.; Liu, Z. X.; Nakayama, Y. In Conference on Photonics for Solar Energy Systems; Gombert, A., Ed.; Strasbourg, France, 2006, pp O1970-O1970.
7. Mattheiss, L. F. Phys. Rev. B 1991, 43, 1863-1866.
8. Szczech, J. R.; Schmitt, A. L.; Bierman, M. J.; Jin, S. Chem. Mater. 2007, 19, 3238-3243.
9. Wu, Y.; Xiang, J.; Yang, C.; Lu, W.; Lieber, C. M. Nature 2004, 430, 61-65.
10. Schmitt, A. L.; Higgins, J. M.; Szczech, J. R.; Jin, S. J. Mater. Chem. 2010, 20, 223-235.
11. Dong, L. F.; Bush, J.; Chirayos, V.; Solanki, R.; Jiao, J. Nano Lett. 2005, 5, 2112-2115.
12. Kim, J.; Anderson, W. A. Nano Lett. 2006, 6, 1356-1359.
13. Huang, Y.; Duan, X. F.; Cui, Y.; Lauhon, L. J.; Kim, K. H.; Lieber, C. M. Science 2001, 294, 1313-1317.
14. Ieong, M.; Narayanan, V.; Singh, D.; Topol, A.; Chan, V.; Ren, Z. B. Mater. Today 2006, 9, 26-31.
15. Dash, W. C. J. Appl. Phys. 1956, 27, 1193-1195.
16. Okamoto, H. J. Phase Equilib. 2002, 23, 281-282.
17. Bernard, F.; Souha, H.; Gaffet, E. Mater. Sci. Eng. A. 2000, 284, 301-306.
18. Richter, K.; Doppler, P. In XIIIth International Symposium on the Reactivity of Solids; Hamburg, Germany, 1996; pp 687-695.
19. Selamoglu, N.; Mucha, J. A.; Flamm, D. L.; Ibbotson, D. E. J. Appl. Phys. 1988, 64, 1494-1498.
20. Parajuli, O.; Kumar, N.; Kipp, D.; Hahm, J. I. Appl. Phys. Lett. 2007, 90, 173107.
21. Kumar, N.; Parajuli, O.; Hahm, J. I. Appl. Phys. Lett. 2007, 91, 143114.
22. Zhang, Z.; Wong, L. M.; Ong, H. G.; Wang, X. J.; Wang, J. L.; Wang, S. J.; Chen, H. Y.; Wu, T. Nano Lett. 2008, 8, 3205-3210.
23. He, Z. A.; Smith, D. J.; Bennett, P. A. Phys. Rev. Lett. 2004, 93, 256102.
24. Chen, S. Y.; Chen, L. J. Appl. Phys. Lett. 2005, 87, 253111.
25. Chen, Y.; Ohlberg, D. A. A.; Medeiros-Ribeiro, G.; Chang, Y. A.; Williams, R. S. Appl. Phys. Lett. 2000, 76, 4004-4006.
26. Nogami, J.; Liu, B. Z.; Katkov, M. V.; Ohbuchi, C.; Birge, N. O. Phys. Rev. B 2001, 63, 233305.
27. Tersoff, J.; Tromp, R. M. Phys. Rev. Lett. 1993, 70, 2782-2785.
28. Wen, C. Y.; Spaepen, F. Philos. Mag. 2007, 87, 5581-5599.
29. Solberg, J. K. Acta Crystallogr., Sect. A 1978, 34, 684-698.
30. Chen, L. J.; Liu, C. S.; Lai, J. B. Mater. Sci. Semicond. Process 2004, 7, 143-156.
31. Wen, C. Y.; Spaepen, F. Philos. Mag. 2007, 87, 5565-5579.
32. Williams, D. B.; Carter, C. B. Transmission Electron Microscopy-A Textbook for Materials Science; Plenum Press: New York and London, 1996; Chapter 18, pp 278-279.
33. Howe, J. M. Interfaces in Materials-Atomic Structure, Thermodynamics and Kinetics of Solid-Vapor, Solid-Liquid and Solid-Solid Interfaces; John Wiley & Sons, Inc.: New York, 1997; Chapter 14, pp 337-437.
34. Knippenberg, W. F. Growth Phenomena in Silicon; Philips Research Laboratories, Surrey, UK, 1963.
35. Xi, S. G.; Zhou, J. G.; Wang, X. T.; Zhang, D. W. J. Mater. Sci. Lett. 1996, 15, 634-635.
36. Istratov, A. A.; Flink, C.; Hieslmair, H.; Weber, E. R.; Heiser, T. Phys. Rev. Lett. 1998, 81, 1243-1246.
37. McBrayer, J. D.; Swanson, R. M.; Sigmon, T. W. J. Electrochem. Soc. 1986, 133, 1242-1246.
38. Seibt, M.; Griess, M.; Istratov, A. A.; Hedemann, H.; Sattler, A.; Schroter, W. Phys. Status Solidi A 1998, 166, 171-182.
39. Blochl, P. E.; Smargiassi, E.; Car, R.; Laks, D. B.; Andreoni, W.; Pantelides, S. T. Phys. Rev. Lett. 1993, 70, 2435-2438.
40. Stolt, L.; Charai, A.; Dheurle, F. M.; Fryer, P. M.; Harper, J. M. E. In 37th National Symposium of the American Vacuum Society; Toronto, Canada, 1990, pp 1501-1505.
41. Cros, A.; Aboelfotoh, M. O.; Tu, K. N. J. Appl. Phys. 1990, 67, 3328-3336.
42. Dallaporta, H.; Liehr, M.; Lewis, J. E. Phys. Rev. B 1990, 41, 5075-5083.
43. Wang, N; Tang, Y. H.; Zhang, Y. F.; Lee, C. S.; Lee, S. T. Phys. Rev. B 1998, 58, 16024-16026.
44. Hibino, H.; Uematsu, M.; Watanabe, Y. J. Appl. Phys. 2006, 100, 113519.
45. van den Oetelaar, L. C. A.; van den Oetelaar, R. J. A.; Partridge, A.; Flipse, C. F. J.; Brongersma, H. H. Appl. Phys. Lett. 1999, 74, 2954-2956.
46. Itsumi, M. In 13th International Conference on Crystal Growth held in conjunction with the 11th International Conference on Vapor Growth and Epitaxy; Kyoto, Japan, 2001, pp 1773-1778.
47. Itsumi, M.; Akiya, H.; Tomita, M.; Ueki, T.; Yamawaki, M. J. Appl. Phys. 1996, 80, 6661-6665.
48. Itsumi, M.; Akiya, H.; Ueki, T.; Tomita, M.; Yamawaki, M. J. Appl. Phys. 1995, 78, 5984-5988.
49. Itsumi, M.; Kiyosumi, F. Appl. Phys. Lett. 1982, 40, 496-498.
50. Itsumi,M.;Maeda,M.; Ueki, T. J. Appl. Phys. 1998, 84, 1241-1245.
51. Itsumi, M.; Tomita, M.; Yamawaki, M. J. Appl. Phys. 1995, 78, 1940-1943.
52. Easterling, K. E.; Porter, D. A. Phase Transformations in Metals and Alloys, 2nd ed.; CRC Press: Boca Raton, FL, 1992; Chapter 5, pp 287-291.