Void growth during thermal decomposition of silicon oxide layers studied by low-energy electron microscopy

Journal of Applied Physics

Volumn 100, Issue 11, 2006, Pages

  Hibino, H ^a   Uematsu, M ^a   Watanabe, Y ^a,b  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MICROSCOPY; GROWTH KINETICS; NUCLEATION; PYROLYSIS; SILICON; SUBSTRATES;

GROWTH RATE; LOW ENERGY ELECTRON MICROSCOPY (LEEM); SILICON OXIDE; VOID GROWTH; VOID SIZE;

LAYERED MANUFACTURING;

EID: 33845754520     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2397283     Document Type: Article

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