Filling the voids in silicon single crystals by precipitation of Cu3Si

Philosophical Magazine

Volumn 87, Issue 35, 2007, Pages 5565-5579

  Wen, C Y ^a   Spaepen, F ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER COMPOUNDS; FILLING; PRECIPITATION (CHEMICAL); SINGLE CRYSTALS; VOID FRACTION;

AVOGADRO'S NUMBER; DISLOCATION LOOPS; PHYSICAL STANDARDS;

SILICON;

EID: 36248955011     PISSN: 14786435     EISSN: 14786443     Source Type: Journal    
DOI: 10.1080/14786430701675811     Document Type: Article

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