Flatband voltage instability characteristics of HfO2 -based GaAs metal-oxide-semiconductor capacitors with a thin Ge layer

Applied Physics Letters

Volumn 92, Issue 10, 2008, Pages

  Kim, Hyoung Sub ^a   Ok, I ^a   Zhang, M ^a   Zhu, F ^a   Park, S ^a   Yum, J ^a   Zhao, H ^a   Lee, Jack C ^a   Oh, Jungwoo ^b   Majhi, Prashant ^b  

^a The University of Texas at Austin   (United States)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); MOS CAPACITORS; PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE;

EQUIVALENT OXIDE THICKNESS; INTERFACIAL PASSIVATION LAYER (IPL); VOLTAGE INSTABILITY;

VOLTAGE CONTROL;

EID: 40849136453     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2844883     Document Type: Article

References (23)

1. K. Rajagopalan, P. Zurcher, J. Abrokwah, R. Droopad, D. A. J. Moran, R. J. W. Hill, X. Li, H. Zhou, D. McIntyre, S. Thoms, I. G. Thayne, and M. Passlack, 65th Device Research Conference Digest, 2007 (unpublished), p. 205.
2. M. Passlack, N. Medendorp, R. Gregory, and D. Braddock, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1635068 83, 5262 (2003).
3. M. Passlack, M. Hong, J. P. Mannaerts, R. L. Opila, S. N. G. Chu, N. Moriya, F. Ren, and J. R. Kwo, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/16.557709 44, 214 (1997).
4. Y. Xuan, Y. Q. Wu, H. C. Lin, T. Shen, and P. D. Ye, 65th Device Research Conference Digest, 2007 (unpublished), p. 207.
5. P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, H.-J. L. Gossmann, M. Hong, K. K. Ng, and J. Bude, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1641527 84, 434 (2004).
6. P. D. Ye, G. D. Wilk, J. Kwo, B. Yang, H.-J. L. Gossmann, M. Frei, S. N. G. Chu, J. P. Mannaerts, M. Sergent, M. Hong, K. K. Ng, and J. Bude, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2003.812144 24, 209 (2003).
7. I. Ok, H. Kim, M. Zhang, T. Lee, F. Zhu, G. Thareja, L. Yu, S. Koveshnikov, W. Tsai, V. Tokranov, M. Yakimov, S. Oktyabrsky, and J. Lee, 64th Device Research Conference Digest, 2006 (unpublished), p. 45.
8. Z. Wang, M. E. Lin, D. Biswas, B. Mazhari, N. Teraguchi, Z. Fan, X. Gui, and H. Morkoq, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.109162 62, 2977 (1993).
9. S. Tiwari, S. L. Wright, and J. Batey, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/55.6954 9, 488 (1988).
10. H.-S. Kim, I. Ok, M. Zhang, C. Choi, T. Lee, F. Zhu, G. Thareja, L. Yu, and J. C. Lee, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2216023 88, 252906 (2006).
11. L. J. Huang, K. Rajesh, W. M. Lau, S. Ingrey, D. Landheer, J. P. Noel, and Z. H. Lu, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.579829 13, 792 (1995).
12. J. Reed, Z. Fan, G. B. Gao, A. Botchkarev, and H. Morkoc, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.111472 64, 2706 (1994).
13. S. J. Rhee, F. Zhu, H. S. Kim, C. H. Choi, C. Y. Kang, M. Zhang, T. Lee, I. Ok, S. A. Krishnan, and J. C. Lee, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2006.871187 27, 225 (2006).
14. C. Choi, C. Y. Kang, S. J. Rhee, M. S. Akbar, S. A. Krishnan, M. Zhang, H. S. Kim, T. Lee, I. Ok, F. Zhu, and J. C. Lee, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2005.851240 26, 454 (2005).
15. L. Kang, B. H. Lee, W.-J. Qi, Y. Jeon, R. Nieh, S. Gopalan, K. Onishi, and J. C. Lee, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/55.830975 21, 181 (2000).
16. S. J. Rhee, C. S. Kang, C. H. Choi, C. Y. Kang, S. Krishnan, M. Zhang, M. S. Akbar, and J. C. Lee, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 10.1109/IEDM.2004.1419307 2004, 837.
17. S. J. Rhee, H.-S. Kim, C. Y. Kang, C. H. Choi, M. Zhang, F. Zhu, T. Lee, I. Ok, M. S. Akbar, S. A. Krishan, and J. C. Lee, Tech. Dig. VLSI Symp. 2005, 168.
18. B. H. Lee, L. Kang, W.-J. Qi, R. Nieh, Y. Jeon, K. Onishi, and J. C. Lee, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 1999, 133.
19. H.-S. Kim, I. Ok, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, and J. C. Lee, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2762291 91, 042904 (2007).
20. H.-S. Kim, I. Ok, M. Zhang, F. Zhu, L. Yu, T. Lee, and J. C. Lee, 37th IEEE Semiconductor Interface Specialists Conference Digest, 2006 (unpublished), p. 28.
21. J. H. Sim, S. C. Song, P. D. Kirsch, C. D. Young, R. Choi, D. L. Kwong, B. H. Lee, and G. Bersuker, Microelectron. Eng. MIENEF 0167-9317 10.1016/j.mee.2005.04.071 80, 218 (2005).
22. Y. Mitani, M. Nagamine, H. Satake, and A. Toriumi, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2002, 509.
23. J. Robertson and B. Falabretti, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2213170 100, 014111 (2006).