Optical properties of Se or S-doped hydrogenated amorphous silicon thin films with annealing temperature and dopant concentration

Journal of Alloys and Compounds

Volumn 509, Issue 7, 2011, Pages 3338-3342

  Sharma, S K ^a,d   Gupta, Himanshu ^b   Purohit, L P ^b   Kumar, K N P ^c   Kim, Bogyun ^a   Kumar, R ^b   Mehra, R M ^d  

^a Cheju Halla University   (South Korea)

^b GURUKUL KANGRI UNIVERSITY   (India)

^c The University of Texas at Dallas   (United States)

^d UNIVERSITY OF DELHI   (India)

Author keywords

Annealing temperatures; Dopant concentrations; Se or S doped a Si:H thin films; Tailoring in optical constants; Transmittance

Indexed keywords

ANNEALING TEMPERATURES; DOPANT CONCENTRATIONS; S-DOPED; TAILORING IN OPTICAL CONSTANTS; TRANSMITTANCE;

AMORPHOUS FILMS; AMORPHOUS SILICON; ANNEALING; CONCENTRATION (PROCESS); DEPOSITION; ENERGY GAP; GLOW DISCHARGES; HYDROGENATION; LIGHT TRANSMISSION; OPTICAL CONSTANTS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; THIN FILMS; VAPOR DEPOSITION;

OPTICAL FILMS;

EID: 78751624152     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.12.056     Document Type: Article

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