The influence of H2/Ar ratio on Ge content of the μc-SiGe: H films deposited by PECVD

Journal of Alloys and Compounds

Volumn 504, Issue 2, 2010, Pages 403-406

  Tang, Zeguo ^a   Wang, Wenbin ^a   Wang, Desheng ^a   Liu, Dequan ^a   Liu, Qiming ^a   He, Deyan ^a  

^a LANZHOU UNIVERSITY   (China)

Author keywords

H2 Ar; Microcrystalline silicon germanium films; Optoelectronic properties; PECVD

Indexed keywords

ALTERNATIVE APPROACH; DARK CONDUCTIVITY; ENVELOPE METHOD; FILM DEPOSITION RATES; FLOWRATE RATIO; GE CONTENT; H2/AR; ON FLOW; OPTICAL TRANSMISSION SPECTRUM; OPTOELECTRONIC PROPERTIES; PECVD; TEMPERATURE-DEPENDENT CONDUCTIVITY;

ACTIVATION ENERGY; ARGON; DEPOSITION RATES; GERMANIUM; LIGHT TRANSMISSION; MICROCRYSTALLINE SILICON; OPTICAL CONSTANTS; SILICON ALLOYS;

OPTICAL FILMS;

EID: 77955428989     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.05.128     Document Type: Article

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