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Volumn 20, Issue SUPPL. 1, 2009, Pages
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Novel process for low temperature crystallization of a-SiC:H for optoelectronic applications
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Author keywords
[No Author keywords available]
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Indexed keywords
A-SIC:H;
ALUMINUM THIN FILMS;
BAND GAPS;
CRYSTALLIZATION PROCESS;
HALL MEASUREMENTS;
HYDROGENATED AMORPHOUS SILICON CARBIDE;
LOW-TEMPERATURE CRYSTALLIZATION;
METAL-INDUCED CRYSTALLIZATION;
NOVEL PROCESS;
OPTOELECTRONIC APPLICATIONS;
SI SUBSTRATES;
UV-VISIBLE;
UV-VISIBLE SPECTRA;
UV-VISIBLE SPECTROPHOTOMETER;
VISIBLE RANGE;
ABSORPTION;
ABSORPTION SPECTROSCOPY;
ALUMINUM;
AMORPHOUS SILICON;
ATOMIC FORCE MICROSCOPY;
CRYSTALLIZATION;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
SILICON CARBIDE;
AMORPHOUS FILMS;
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EID: 65549153561
PISSN: 09574522
EISSN: 1573482X
Source Type: Journal
DOI: 10.1007/s10854-008-9647-8 Document Type: Conference Paper |
Times cited : (5)
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References (16)
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