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Volumn 2, Issue 1, 2010, Pages 159-164
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Annealing effects on PECVD-grown Si rich aSiNx thin films
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Author keywords
Silicon nitride; Silicon quantum dots; Third generation photovoltaics
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Indexed keywords
ANNEALING EFFECTS;
ANNEALING TEMPERATURES;
AS-GROWN;
HIGHEST TEMPERATURE;
NITRIDE FILMS;
OPTICAL ABSORPTION;
RAMAN SPECTRA;
ROOM-TEMPERATURE PHOTOLUMINESCENCE;
SILICON CONTENTS;
SILICON NANOCRYSTALS;
SILICON QUANTUM DOTS;
THERMAL TREATMENT;
THIRD GENERATION PHOTOVOLTAICS;
AMORPHOUS FILMS;
OPTICAL WAVEGUIDES;
PHASE SEPARATION;
PHOTOVOLTAIC EFFECTS;
RAMAN SPECTROSCOPY;
SEMICONDUCTOR QUANTUM DOTS;
SILICON NITRIDE;
STOICHIOMETRY;
AMORPHOUS SILICON;
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EID: 77957791317
PISSN: 18766102
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1016/j.egypro.2010.07.022 Document Type: Conference Paper |
Times cited : (18)
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References (16)
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