메뉴 건너뛰기




Volumn 2, Issue 1, 2010, Pages 159-164

Annealing effects on PECVD-grown Si rich aSiNx thin films

Author keywords

Silicon nitride; Silicon quantum dots; Third generation photovoltaics

Indexed keywords

ANNEALING EFFECTS; ANNEALING TEMPERATURES; AS-GROWN; HIGHEST TEMPERATURE; NITRIDE FILMS; OPTICAL ABSORPTION; RAMAN SPECTRA; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SILICON CONTENTS; SILICON NANOCRYSTALS; SILICON QUANTUM DOTS; THERMAL TREATMENT; THIRD GENERATION PHOTOVOLTAICS;

EID: 77957791317     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2010.07.022     Document Type: Conference Paper
Times cited : (18)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.