Effects of embedded crystallites in amorphous silicon on light-induced defect creation

Applied Physics Letters

Volumn 74, Issue 12, 1999, Pages 1707-1709

  Kamei, Toshihiro ^a   Stradins, Paul ^a   Matsuda, Akihisa ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CARRIER CONCENTRATION; CHEMICAL BONDS; CRYSTAL DEFECTS; ELECTRON DIFFRACTION; ELECTRON TRANSITIONS; RADIATION EFFECTS; RAMAN SPECTROSCOPY; SEMICONDUCTING FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CARRIER RECOMBINATION; DANGLING BOND DEFECTS; LIGHT INDUCED DEFECTS (LID);

SEMICONDUCTING SILICON;

EID: 0032613769     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123662     Document Type: Article

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