Effect of energetic ions on the stability of bond-center hydrogen in silicon

Physical Review B - Condensed Matter and Materials Physics

Volumn 75, Issue 23, 2007, Pages

  Nageswara Rao, S V S ^a   Dixit, S K ^b   Lupke G ^c   Tolk, N H ^a   Feldman, L C ^a,b  

^a VANDERBILT UNIVERSITY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c Dept of Economics and Thomas Jefferson Program in Public Policy at the College of William and Mary   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34347374873     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.75.235202     Document Type: Article

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