Modelling the light induced metastable effects in amorphous silicon

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 2, 2008, Pages 606-608

  Munyeme, G ^a   Chinyama, G K ^a   Zeman, M ^b   Schropp, R I ^c   Van Der Weg, W F ^c  

^a UNIVERSITY OF ZAMBIA   (Zambia)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c UTRECHT UNIVERSITY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMPHOTERIC NATURE; CHARGE STATE; CHARGED STATE; DEFECT CREATION; DEGRADATION PROCESS; DYNAMIC SCALING; GAP STATE; LIGHT-INDUCED DEGRADATION; METASTABLE EFFECT; RECOMBINATION CENTRES; SIMULATION APPROACH; SIMULATION RESULT; STATE DENSITIES;

COMPUTER SIMULATION; DANGLING BONDS; DEFECT DENSITY; DEFECTS; DEGRADATION; SILICON SOLAR CELLS; SOLAR CELLS; SOLAR ENERGY;

AMORPHOUS SILICON;

EID: 77951132109     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200776804     Document Type: Conference Paper

References (8)

1. D.I. Staebler and C.R. Wronski, Appl. Phys. Lett. 37, 292 (1977).
2. K. Shimakawa, A. Kolobov, and S.R. Elliot, Adv. Phys. 44, 475 (1995).
3. J.I. Pankove and J.E. Berkeyheiser, Appl. Phys. Lett. 37, 705 (1985).
4. M.J. Powell and S.C. Dean, Phys. Rev. B 48, 10815 (1993).
5. M. Stutzmann, W.B. Jackson, and C.C. Tsai, Phys. Rev. B 32, 23 (1985).
6. M. Stutzmann, Philos. Mag. B 56(1), 63 (1987).
7. M. Hack and M. Shur, J. Appl. Phys. 58(4), 1656 (1985).
8. H. Stiebig and F. Siebke, Philos. Mag. B 72, 489 (1995).