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Applied Physics Letters

Volumn 94, Issue 15, 2009, Pages

Low effective barrier height of GaOx tunnel barrier in metal/semiconductor hybrid junctions

(4) Le Breton, J C a Saito, H a,b Yuasa, S a Ando, K a

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; BARRIER MATERIALS; GAAS; HIGH QUALITIES; HYBRID JUNCTIONS; LINEAR RELATIONS; RESISTANCE-AREA PRODUCTS; ROOM TEMPERATURES; TUNABILITY; TUNNEL BARRIERS;

GALLIUM ALLOYS; SEMICONDUCTING GALLIUM; TUNNELS;

TUNNEL JUNCTIONS;

EID: 65249159593 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3119320 Document Type: Article

Times cited : (9)

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