Reduction of spin injection efficiency by interface defect spin scattering in ZnMnSe/AlGaAs-GaAs spin-polarized light-emitting diodes

Physical Review Letters

Volumn 89, Issue 16, 2002, Pages 166602/1-166602/4

  Stroud, R M ^a   Hanbicki, A T ^a   Park, Y D ^a   Kioseoglou, G ^a   Petukhov, A G ^a   Jonker, B T ^a   Itskos, G ^b   Petrou, A ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b UNIVERSITY AT BUFFALO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ELECTRONS; ETCHING; INTERFACES (MATERIALS); LIGHT POLARIZATION; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; PHOTOLITHOGRAPHY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

CHEMICAL ETCHING TECHNIQUE; ELECTRON INJECTION; MULTICHAMBER SYSTEM; QUANTUM SELECTION RULE; SPIN INJECTION EFFICIENCY; SPIN-FLIP SCATTERING;

LIGHT EMITTING DIODES;

EID: 0037078668     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.89.166602     Document Type: Article

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