Surface passivation oxide effects on the current gain of 4H-SiC bipolar junction transistors

Applied Physics Letters

Volumn 92, Issue 8, 2008, Pages

  Lee, H S ^a   Domeij, M ^a   Zetterling, C M ^a   Ostling M ^a   Allerstam, F ^b   Sveinbjornsson E O ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRON TRAPS; OXIDATION; PASSIVATION; REDUCTION; SILICON CARBIDE;

BASE-EMITTER JUNCTIONS; DRY OXIDATION; NITROUS OXIDE; SURFACE RECOMBINATION;

BIPOLAR TRANSISTORS;

EID: 40049097542     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2888965     Document Type: Article

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