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Volumn 158, Issue 2, 2011, Pages

Removal of high-dose ion-implanted 248 nm deep UV photoresist using UV irradiation and organic solvent

Author keywords

[No Author keywords available]

Indexed keywords

DEEP UV PHOTORESISTS; FRONT END OF LINES; HIGH DOSE; LONG WAVELENGTH; LOW DOSE; NOVEL MATERIALS; OPTIMAL CONDITIONS; POST TREATMENT; POWER DENSITIES; PRE-TREATMENT; REMOVAL EFFICIENCIES; RESIDUE REMOVAL; RESIST LAYERS; SEMICONDUCTOR MANUFACTURING; SHORT WAVELENGTHS; SIGNIFICANT IMPACTS; UV IRRADIATION; UV WAVELENGTH; WET PROCESS;

EID: 78650744709     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3524275     Document Type: Article
Times cited : (9)

References (19)
  • 8
  • 9
    • 38549135502 scopus 로고    scopus 로고
    • DDBPE8 1012-0394, 10.4028/www.scientific.net/SSP.134.97
    • K. Saga and T. Hattori, Solid State Phenom. DDBPE8 1012-0394, 134, 97 (2008). 10.4028/www.scientific.net/SSP.134.97
    • (2008) Solid State Phenom. , vol.134 , pp. 97
    • Saga, K.1    Hattori, T.2
  • 18
    • 0022189460 scopus 로고
    • PDSTDW 0141-3910, 10.1016/0141-3910(85)90084-9
    • N. A. Weir, J. Arct, and M. Farahani, Polym. Degrad. Stab. PDSTDW 0141-3910, 13, 361 (1985). 10.1016/0141-3910(85)90084-9
    • (1985) Polym. Degrad. Stab. , vol.13 , pp. 361
    • Weir, N.A.1    Arct, J.2    Farahani, M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.