Etch rate study of germanium, GaAs, and InGaAs: A challenge in semiconductor processing

Solid State Phenomena

Volumn 145-146, Issue , 2009, Pages 203-206

  Sioncke, Sonja ^a   Brunco, David P ^b   Meuris, Marc ^a   Uwamahoro, Olivier ^c   Van Steenbergen, Jan ^d   Vrancken, Evi ^a   Heyns, Marc M ^a  

^a IMEC   (Belgium)

^b INTEL CORPORATION   (United States)

^c GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

^d JSR Micro NV Belgium   (Belgium)

Author keywords

Etch rate; GaAs; Ge; InGaAs

Indexed keywords

CARRIER MOBILITY; CLEANING; GALLIUM ALLOYS; GALLIUM ARSENIDE; GERMANIUM; MATERIALS; PHOTORESISTS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; STRIPPING (DYES); TRANSISTORS; III-V SEMICONDUCTORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR ALLOYS;

CHANNEL MATERIALS; CHEMICAL SOLUTIONS; ETCH RATES; GAAS; HIGH MOBILITY; NEW MATERIAL; PHYSICAL LIMITS; SEMICONDUCTOR INDUSTRY; SEMICONDUCTOR PROCESSING; HIGH ETCH RATE; INGAAS; ORGANIC CONTAMINANT; SIMILAR SOLUTION;

SEMICONDUCTING SILICON; SEMICONDUCTING INDIUM COMPOUNDS;

EID: 70449489464     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.145-146.203     Document Type: Conference Paper

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