Ion-implanted photoresist stripping using supercritical carbon dioxide

ECS Transactions

Volumn 1, Issue 3, 2006, Pages 277-284

  Saga, K ^a   Kuniyasu, H ^a   Hattori, T ^a   Korzenski, M B ^b   Visintin, P M ^b   Baum, T H ^b  

^a SONY CORPORATION   (Japan)

^b Advanced Technology Materials Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITIVES; CARBON DIOXIDE; DOPING (ADDITIVES); SCANNING ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

DOPANT CONSUMPTION; ION-IMPLANTED PHOTORESISTS;

PHOTORESISTS;

EID: 32844475671     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. M. Korzenski, C. Xu, T. Baum, K. Saga, H. Kuniyasu, and T. Hattori, in Cleaning Technology in Semiconductor Device Manufacturing VIII, J. Ruzyllo, T. Hattori, R. L. Opila, and R. E. Novak, Editors, PV 2003-26, p.222, The Electrochemical Society Meeting Proceedings Series, Pennington, NJ (2004).
2. K. Saga, H. Kuniyasu, T. Hattori, K. Yamada and T. Azuma, in Proceedings of Ultra Clean Processing of Silicon Surfaces, pp. 115-120, Scitec Publications, Switzland, 2005.
3. R. B. Turkot Jr, V. S. RamchandraRao, S. A. Iyer, and S. C. Clark, in Cleaning Technology in Semiconductor Device Manufacturing VIII, J. Ruzyllo, T. Hattori, R. L. Opila, and R. E. Novak, Editors, PV 2003-26, p.254, The Electrochemical Society Meeting Proceedings Series, Pennington, NJ (2004).