Removal of post-etch 193 nm photoresist in porous low-k dielectric patterning using UV irradiation and ozonated water

Microelectronic Engineering

Volumn 87, Issue 9, 2010, Pages 1674-1679

  Kesters, E ^a   Le, Q T ^a   Lux, M ^a   Prager, L ^b   Vereecke, G ^a  

^a IMEC   (Belgium)

^b LEIBNIZ INSTITUTE OF SURFACE ENGINEERING IOM   (Germany)

Author keywords

Chain scissioning; Oxidizing chemistries; Photoresist wet strip; UV pre treatment

Indexed keywords

193 NM PHOTORESISTS; BACK END OF LINES; C-C BONDS; OZONATED WATER; PHOTORESIST WET STRIP; POROUS LOW-K DIELECTRICS; PRE-TREATMENT; PURE ORGANIC SOLVENTS; SEMICONDUCTOR MANUFACTURING; UV IRRADIATION; UV PRE-TREATMENT; WET PROCESS; WET STRIPS;

CHEMICAL MODIFICATION; IRRADIATION; ORGANIC SOLVENTS; PHOTODEGRADATION; PHOTORESISTS;

WATER TREATMENT;

EID: 77955230235     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.11.051     Document Type: Conference Paper

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