Evaluation of plasma strip induced substrate damage

Solid State Phenomena

Volumn 145-146, Issue , 2009, Pages 249-252

  Han, Keping ^a   Luo, S ^a   Escorcia, O ^a   Waldfried, Carlo ^a   Berry, Ivan ^a  

^a AXCELIS TECHNOLOGIES   (United States)

Author keywords

Dopant loss; Post implant resist strip; Silicon loss; Surface oxidation; Ultra shallow junction

Indexed keywords

FLUORINE; OXIDATION; PLASMAS; SEMICONDUCTOR JUNCTIONS; SUBSTRATES; SURFACE CLEANING; TECHNOLOGICAL FORECASTING; SILICON OXIDES;

DOPANT LOSS; DRIVE CURRENTS; FLUORINE PLASMA; HIGH DOSE; JUNCTION PROFILES; MASS MEASUREMENTS; OXIDE MEASUREMENTS; PLASMA PROCESS; POST-IMPLANT RESIST STRIP; RESIDUE REMOVAL; SILICON RECESS; SILICON SURFACES; SOURCE/DRAIN EXTENSION; SUBSTRATE DAMAGE; SUBSTRATE LOSS; SURFACE OXIDATIONS; SURFACE PREPARATION TECHNOLOGY; TEM; ULTRA SHALLOW JUNCTION; XPS; DIFFERENT EFFECTS; GOOD CORRELATIONS; MASS-LOSS MEASUREMENT; SURFACE CLEANLINESS;

SILICON OXIDES; SUBSTRATES;

EID: 70449508583     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.145-146.249     Document Type: Conference Paper

References (3)

1. International Technology Roadmap for Semiconductors, 2006 updates
2. K. Han, S. Luo, P. Geissbühler, Q. Han, I. Berry, R. Sonnemans, V. Grimm and C. Krueger, "Non-fluorine plasma strip of HDI resist for 45nm node", PESM 2007.
3. I. L. Berry, C. Waldfried, K. Han, S. Luo, R. Sonnemans, and M. Ameen, 8th International Workshop on Junction Technology, Shanghai, China (May 2008)