Characterization of 248nm deep ultraviolet (DUV) photoresist after ion implantation

ECS Transactions

Volumn 25, Issue 5, 2009, Pages 187-194

  Tsvetanova, D ^a,b   Vos, R ^a   Vereecke, G ^a   Clemente, F ^a   Vanstreels, K ^a   Conard, T ^a   Franquet, A ^a   Parac Vogt, T N ^b   Mertens, P ^a   Heyns, M M ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS CARBON; DENSITY (SPECIFIC GRAVITY); ION IMPLANTATION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES;

ACCELERATION ENERGY; ARSENIC IMPLANTATION; CROSS-LINKING DENSITY; DEEP ULTRAVIOLET; ELEMENTAL COMPOSITIONS; EXPERIMENTAL EVIDENCE; MICRO RAMAN SPECTROSCOPY; SOLID-STATE NUCLEAR MAGNETIC RESONANCE;

PHOTORESISTS;

EID: 74949092302     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3202652     Document Type: Conference Paper

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