Post extension ion implant photo resist strip for 32 nm technology and beyond

Solid State Phenomena

Volumn 145-146, Issue , 2009, Pages 253-256

  Mannaert, G ^a   Witters, L ^a   Shamiryan, D ^a   Boullart, W ^a   Han, K ^b   Luo, S ^b   Falepin, A ^b   Sonnemans, R ^b   Berry, I ^b   Waldfried, C ^b  

^a IMEC   (Belgium)

^b AXCELIS TECHNOLOGIES   (United States)

Author keywords

Dopant loss; Fin; Photo resist strip

Indexed keywords

ELECTRIC RESISTANCE; FINS (HEAT EXCHANGE); FLUORINE; SILICON OXIDES;

32 NM TECHNOLOGY; ADVANCED TECHNOLOGY; ASH CHEMISTRY; ASH PROCESS; DOPANT LOSS; FLUORINE-FREE; ION IMPLANT; LOW ENERGIES; PERFORMANCE COMPARISON; PROCESS CONDITION; SHALLOW EXTENSION; SOURCE/DRAIN RESISTANCES; SUBSTRATE OXIDATION;

PHOTORESISTORS;

EID: 74949130282     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.145-146.253     Document Type: Conference Paper

References (1)

1. K. Han: Non-fluorine plasma strip of HDI resist for 45 nm node (PESM Conference Leuven, 2007) (see e.g. http://www.pesm2007.be)