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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 9 A, 1998, Pages 4704-4710

Electrical instability of hydrogenated amorphous silicon thin-film transistors for active-matrix liquid-crystal displays

(3) Chiang, Chun Sung a Kanicki, Jerzy a Takechi, Kazushige b

a University of Michigan (United States)

b NEC CORPORATION (Japan)

Author keywords

Active matrix liquid crystal display; Amorphous silicon thin film transistor; Electrical instability; Threshold voltage

Indexed keywords

AMORPHOUS SILICON; CARRIER CONCENTRATION; DATABASE SYSTEMS; ELECTRIC FIELD EFFECTS; ELECTRIC PROPERTIES; HYDROGENATION; INTERFACES (MATERIALS); LIQUID CRYSTAL DISPLAYS; MATHEMATICAL MODELS; RELIABILITY THEORY;

ACTIVE MATRIX LIQUID CRYSTAL DISPLAYS; ELECTRIC INSTABILITY; ELECTRICAL RELIABILITY EVALUATION; HYDROGENATED AMORPHOUS SILICON; PULSED GATE BIAS INSTABILITY MODEL;

THIN FILM TRANSISTORS;

EID: 0032154561 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.4704 Document Type: Article

Times cited : (119)

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