High reliable and manufacturable gallium indium zinc oxide thin-film transistors using the double layers as an active layer

Journal of the Electrochemical Society

Volumn 156, Issue 3, 2009, Pages

  Kim, Sun Il ^a   Park, Jin Seong ^b   Kim, Chang Jung ^a   Park, Jae Chul ^a   Song, Ihun ^a   Park, Young Soo ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Samsung SDI   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COPPER; DRAIN CURRENT; GALLIUM; OCEAN STRUCTURES; OXIDES; PLASMAS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE; TRANSISTORS; ZINC; ZINC OXIDE;

ACTIVE LAYERS; BOTTOM GATES; BOTTOM LAYERS; CONDUCTING SURFACES; CU ATOMS; DOUBLE LAYERS; GALLIUM INDIUM ZINC OXIDES; HIGH RELIABLE; PLASMA DAMAGES; RELIABLE PERFORMANCE; SUB THRESHOLDS; THRESHOLD VOLTAGE SHIFTS;

INDIUM;

EID: 59349115938     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3060129     Document Type: Article

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