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Journal of Materials Science: Materials in Electronics

Volumn 21, Issue 12, 2010, Pages 1322-1326

MOS capacitors with metal gate/high-k dielectrics on GaAs bulk substrate

(3) Budhraja, V a Wang, X b Misra, D a

a NEW JERSEY INSTITUTE OF TECHNOLOGY (United States)

b Villanova University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BULK SUBSTRATES; CAPACITANCE DENSITY; CONDUCTANCE MEASUREMENT; CONDUCTION PROCESS; DIFFERENT-METAL GATES; ELECTRICAL CHARACTERISTIC; GAAS; INTERFACE BEHAVIOR; INTERFACE STATE; INTERFACE STATE DENSITY; K DIELECTRICS; LOW TEMPERATURES; LOW-TEMPERATURE MEASUREMENTS; P-TYPE GAAS; ROOM TEMPERATURE;

CAPACITORS; GALLIUM ARSENIDE; HAFNIUM COMPOUNDS; MOS CAPACITORS; SEMICONDUCTING GALLIUM; TEMPERATURE MEASUREMENT;

GALLIUM ALLOYS;

EID: 78650702288 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-010-0069-z Document Type: Article

Times cited : (16)

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