Optical, mechanical and etch properties of amorphous carbon nitride films grown by plasma enhanced chemical vapor deposition at room temperature

Synthetic Metals

Volumn 160, Issue 23-24, 2010, Pages 2442-2446

  Kim, Sang Hoon ^a,b   Choi, Cheol Min ^a   Lee, Kil Mok ^a   Hahn, Yoon Bong ^a,b  

^a Chonbuk National University   (South Korea)

^b NAJRAN UNIVERSITY   (Saudi Arabia)

Author keywords

Carbon nitride; Etch behavior; Hardness; Optical absorption; PECVD

Indexed keywords

AMORPHOUS CARBON NITRIDE (A-CN); AMORPHOUS CARBON NITRIDE FILMS; AS-DEPOSITED FILMS; BOND STRUCTURES; CN FILM; ETCH BEHAVIOR; ETCH PROPERTIES; GRAPHITE-LIKE STRUCTURES; HARD MASKS; OPTICAL ABSORPTION; OPTICAL ABSORPTION COEFFICIENTS; PECVD; ROOM TEMPERATURE; SI(1 0 0); WAVELENGTH RANGES;

ABSORPTION; AMORPHOUS CARBON; AMORPHOUS FILMS; AMORPHOUS SILICON; CARBON NITRIDE; HARDNESS; LIGHT ABSORPTION; MECHANICAL PROPERTIES; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON COMPOUNDS;

CARBON FILMS;

EID: 78650624336     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2010.09.024     Document Type: Article

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