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Volumn 6, Issue 24, 2010, Pages 2822-2825

A graphene nanoribbon memory cell

(6) Stützel, Eberhard Ulrich a Burghard, Marko a Kern, Klaus a,b Traversi, Floriano c Nichele, Fabrizio c Sordan, Roman c

a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG (Germany)

b EPFL (Switzerland)

c POLITECNICO DI MILANO (Italy)

Author keywords

Data storage; Field effect; Graphene; Molecular electronics; Transistors

Indexed keywords

AMBIENT CONDITIONS; CLOCK FREQUENCY; DATA STORAGE; ETCHING MASKS; FIELD EFFECTS; GRAPHENE NANO-RIBBON; MEMORY CELL; MEMORY EFFECTS; NANORIBBONS; PULSE DURATIONS;

GRAPHENE; MOLECULAR ELECTRONICS; SEMICONDUCTOR STORAGE;

FIELD EFFECT TRANSISTORS;

CARBON NANOTUBE; GRAPHITE;

ARTICLE; CHEMISTRY; INFORMATION RETRIEVAL; METHODOLOGY; NANOTECHNOLOGY; SEMICONDUCTOR;

GRAPHITE; INFORMATION STORAGE AND RETRIEVAL; NANOTECHNOLOGY; NANOTUBES, CARBON; TRANSISTORS, ELECTRONIC;

EID: 78650394385 PISSN: 16136810 EISSN: 16136829 Source Type: Journal
DOI: 10.1002/smll.201000854 Document Type: Article

Times cited : (32)

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