Temperature-dependence of off-state drain leakage in X-ray irradiated 130 nm CMOS devices

IEEE Transactions on Nuclear Science

Volumn 53, Issue 6, 2006, Pages 3203-3209

  Jun, Bongim ^a,b   Diestelhorst, Ryan M ^b   Bellini, Marco ^b   Espinel, Gustavo ^b   Appaswamy, Aravind ^b   Prakash, A F Gnana ^b   Cressler, John D ^a,b   Chen, Dakai ^c   Schrimpf, Ronald D ^a,c   Fleetwood, Daniel M ^a,c   Turowski, Marek ^a,d   Raman, Ashok ^d  

^a IEEE   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c VANDERBILT UNIVERSITY   (United States)

^d CFD RESEARCH CORPORATION   (United States)

Author keywords

CMOS; Cryogenic; GIDL; Off state leakage current; Shallow trench isolation; STI; Total dose radiation effects

Indexed keywords

GATE OXIDES; GIDL; OFF STATE LEAKAGE CURRENT; SHALLOW TRENCH ISOLATION; TOTAL DOSE RADIATION EFFECTS; X RAY IRRADIATION;

COOLING; CRYOGENICS; DOSIMETRY; ELECTRON TRAPS; LEAKAGE CURRENTS; RADIATION EFFECTS;

CMOS INTEGRATED CIRCUITS;

EID: 33846289919     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.886230     Document Type: Conference Paper

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