Total dose effects in CMOS trench isolation regions

IEEE Transactions on Nuclear Science

Volumn 56, Issue 4, 2009, Pages 1941-1949

  Johnston, A H ^a   Swimm, R T ^a   Allen, G R ^a   Miyahira, T F ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

CMOS; Ionizing dose; Scaling; Shallow trench isolation; Space radiation

Indexed keywords

CMOS; IONIZING DOSE; SCALING; SHALLOW TRENCH ISOLATION; SPACE RADIATION;

IONIZING RADIATION;

SEMICONDUCTING SILICON;

EID: 69549120720     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2009.2019273     Document Type: Conference Paper

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