Total dose effects on the shallow-trench isolation leakage current characteristics in a 0.35μm SiGe BiCMOS technology

IEEE Transactions on Nuclear Science

Volumn 46, Issue 6 PART 1, 1999, Pages 1841-1847

  Niu, Guofu ^a  

^a AUBURN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CHARGE; GAMMA RAYS; GATES (TRANSISTOR); INTERFACES (MATERIALS); IRRADIATION; LEAKAGE CURRENTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSMISSION ELECTRON MICROSCOPY;

BICMOS TECHNOLOGY; SHALLOW TRENCH ISOLATION; SILICON GERMANIUM; SOFTWARE PACKAGE MEDICI; TOTAL DOSE EFFECTS;

RADIATION EFFECTS;

EID: 0033307561     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.819163     Document Type: Article

References (11)

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