Dose-rate sensitivity of modern nMOSFETs

IEEE Transactions on Nuclear Science

Volumn 52, Issue 6, 2005, Pages 2602-2608

  Witczak, Steven C ^a,b   Lacoe, Ronald C ^a,b   Osborn, Jon V ^a,b   Hutson, John M ^a,b   Moss, Steven C ^a,b  

^a IEEE   (United States)

^b AEROSPACE CORPORATION   (United States)

Author keywords

Anneal; Dose rate; E center; Edge leakage current; Field oxide; Hardness assurance; Ionizing radiation; Metal oxide semiconductor field effect transistor (MOSFET); MIL STD 883F Method 1019.6; Space charge

Indexed keywords

DOSE RATE; E′ Δ CENTER; EDGE-LEAKAGE CURRENT; FIELD OXIDE; HARDNESS ASSURANCE; MIL-STD-883F METHOD 1019.6;

ACTIVATION ENERGY; ANNEALING; CMOS INTEGRATED CIRCUITS; DEGRADATION; HARDNESS; IONIZING RADIATION; IRRADIATION; LEAKAGE CURRENTS; TRANSISTORS;

MOSFET DEVICES;

EID: 33144483678     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.860709     Document Type: Conference Paper

References (24)

1. R. C. Lacoe, J. V. Osborn, R. Koga, S. Brown, and D. C. Mayer, "Application of hardness-by-design methodology to radiation-tolerant ASIC technologies," IEEE Trans. Nucl. Sci., vol. 47, no. 6, pp. 2334-2341, Dec. 2000.
2. R. C. Lacoe, "CMOS scaling, design principles and hardening-by-design methodology," in Short Course Notebook, Nuclear and Space Radiation Effects Conf. (NSREC'03), Monterey, CA, Jul. 2003, pp. II-1-II-142.
3. T. R. Oldham, A. J. Lelis, H. E. Boesch Jr., J. M. Benedetto, F. B. McLean, and J. M. McGarrity, "Post-irradiation effects in field-oxide isolation structures," IEEE Trans. Nucl. Sci., vol. 34, no. 6, pp. 1184-1189, Dec. 1987.
4. D. M. Fleetwood, P. S. Winokur, and J. R. Schwank, "Using laboratory x-ray and Co-60 irradiations to predict CMOS device response in strategic and space environments," IEEE Trans. Nucl. Sci., vol. 35, no. 6, pp. 1497-1505, Dec. 1988.
5. Ionizing Radiation (Total Dose) Test Procedure, MIL-STD-883F, Method 1019.6, 2003.
6. M. R. Shaneyfelt, P. E. Dodd, B. L. Draper, and R. S. Flores, "Challenges in hardening technologies using shallow-trench isolation, " IEEE Trans. Nucl. Sci., vol. 45, no. 6, pp. 2584-2592, Dec. 1998.
7. C. Brisset, V. Ferlet-Carvois, O. Flament, O. Musseau, J. L. Leray, J. L. Pelloie, R. Escoffier, A. Michez, C. Cirba, and G. Bordure, "Two-dimensional simulation of total dose effects on NMOSFET with lateral parasitic transistor," IEEE Trans. Nucl. Sci., vol. 43, no. 6, pp. 2651-2658, Dec. 1996.
8. J. V. Osborn, R. C. Lacoe, D. C. Mayer, and G. Yabiku, "Total dose hardness of three commercial CMOS microelectronics foundries," IEEE Trans. Nucl. Sci., vol. 45, no. 3, pp. 1458-1463, Jun. 1998.
9. A. Acovic, M. Dutoit, and M. Ilegems, "Characterization of hot-electron-stressed MOSFET's by low temperature measurements of the drain tunnel current," IEEE Trans. Electron Devices, vol. 37, no. 6, pp. 1467-1476, Jun. 1990.
10. P. J. McWhorter and P. S. Winokur, "Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistors," Appl. Phys. Lett., vol. 48, no. 2, pp. 133-135, Jan. 1986.
11. M. Turowski, A. Raman, and R. D. Schrimpf, "Nonuniform total-dose-induced charge distribution in shallow-trench isolation oxides, " IEEE Trans. Nucl. Sci., vol. 51, no. 6, pp. 3166-3171, Dec. 2004.
12. C. M. Dozier, D. M. Fleetwood, D. B. Brown, and P. S. Winokur, "An evaluation of low-energy X-ray and cobalt-60 irradiations of MOS transistors," IEEE Trans. Nucl. Sci., vol. 34, no. 6, pp. 1535-1539, Dec. 1987.
13. + process," IEEE Trans. Nucl. Sci., vol. 36, no. 6, pp. 1848-1857, Dec. 1989.
14. J. R. Schwank, P. S. Winokur, P. J. McWhorter, F. W. Sexton, P. V. Dressendorfer, and D. C. Turpin, "Physical mechanisms contributing to device rebound," IEEE Trans. Nucl. Sci., vol. 31, no. 6, pp. 1434-1438, Dec. 1984.
15. 2," IEEE Trans. Nucl. Sci., vol. 49, no. 6, pp. 2667-2673, Dec. 2002.
16. P. J. McWhorter, S. L. Miller, and W. M. Miller, "Modeling the anneal of radiation-induced trapped holes in a varying thermal environment," IEEE Trans. Nucl. Sci., vol. 37, no. 6, pp. 1682-1689, Dec. 1990.
17. D. M. Fleetwood, P. S. Winokur, C. E. Barnes, and D. C. Shaw, "Accounting for time dependent effects on CMOS total-dose response in space environments," Radiat. Phys. Chem., vol. 43, pp. 129-136, 1994.
18. P. S. Winokur, K. G. Kerns, and L. Harper, "Predicting CMOS inverter response in nuclear and space environments," IEEE Trans. Nucl. Sci., vol. 30, no. 6, pp. 4326-4332, Dec. 1983.
19. F. B. McLean, "A direct tunneling model of charge transfer at the insulator-semiconductor interface in MIS devices,", U.S. Army Harry Diamond Laboratories Tech. Rep. HDL-TR-1765, 1976.
20. DESSIS 10.0 User's Manual, Synopsis, Mountain View, CA, 2005.
21. M. D. Jacunski and M. C. Peckerar, "A model for radiation induced edge leakage in bulk silicon NMOS transistors," IEEE Trans. Nucl. Sci., vol. 39, no. 6, pp. 1947-1952, Dec. 1992.
22. D. M. Fleetwood, S. L. Kosier, R. N. Nowlin, R. D. Schrimpf, R. A. Reber Jr., M. DeLaus, P. S. Winokur, A. Wei, W. E. Combs, and R. L. Pease, "Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates," IEEE Trans. Nucl. Sci., vol. 41, no. 6, pp. 1871-1882, Dec. 1994.
23. D. M. Fleetwood, L. C. Riewe, J. R. Schwank, S. C. Witczak, and R. D. Schrimpf, "Radiation effects at low electric fields in thermal, SIMOX and bipolar-base oxides," IEEE Trans. Nucl. Sci., vol. 43, no. 6, pp. 2537-2546, Dec. 1996.
24. W. L. Warren, M. R. Shaneyfelt, J. R. Schwank, D. M. Fleetwood, P. S. Winokur, R. Devine, W. P. Maszara, and J. B. McKitterick, "Paramagnetic defect centers in BESOI and SIMOX buried oxides," IEEE Trans. Nucl. Sci., vol. 40, no. 6, pp. 1755-1764, Dec. 1993.